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To date, Dr. Huamin Li's research results have been included in one book chapter (2013), published in the top journals, including Advanced Materials (2020), Nature Communications (2015), ACS Nano (2017, 2021), ACS Applied Materials & Interfaces (2022), npj 2D Materials and Applications (2022), Carbon (2021), Applied Physics Letters (2021)Biosensors and Bioelectronics (2019), Sensors and Actuators B:  Chemical (2021), Nanomaterials (2021), Nanoscale (2020), Scientific Reports (2014), and IEEE Transaction on Electron Devices (2009–2012, 2017), etc., presented in the world’s pre-eminent IEEE International Electron Devices Meeting (IEDM, 2009, 2011–2013, 2020), and filed seven US and Korean patents. 

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Notation: Underline as the Li group member, ✉ as the corresponding author.

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     Book Chapters     

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[B2] J. Sun, C. Yang, F. Yao, and H. Li, "Two-dimensional semiconductors for photodetection," in Encyclopedia of Applied Physics, published by John Wiley & Sons, Inc., 2022. (ISBN: 9783527600434)

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[B1] H.-M. Li and W. J. Yoo, "Photonic properties of graphene device," in Two Dimensional Carbon: Fundamental Properties, Synthesis, Characterization, and Applications, published by Jenny Stanford Publishing, 2013. (ISBN: 9789814411943)

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Books

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     Journals     

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[J37] M. Liu, H. N. Jaiswal, S. Shahi, A. Chakravarty, S. Wei, Y. Fu, A. Ahmed, A. Cabanillas, F. Yao ✉, and H. Li âœ‰, "Cold-source transistors: An emerging steep-slope transistor for beyond CMOS logic," under review. 

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[J36] A. CabanillasS. Shahi, M. Liu, H. N. Jaiswal, S. Wei, Y. Fu, A. Chakravarty, A. Ahmed, X. Liu, J. Sun, C. Yang, W. J. Yoo, T. Knobloch, V. Perebeinos, A. Di Bartolomeo, T. Grasser âœ‰, F. Yao ✉, and H. Li âœ‰, "Large out-of-plane charge rectification and conductance through two-dimensional monolayers," under review. 

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[J35] Y. Jing, X. Dai, J. Yang, X. Zhang, Z. Wang, X. Liu, H. Li, Y. Yuan, X. Zhou, H. Luo, D. Zhang, and J. Sun âœ‰, "Integration of ultrathin hafnium oxide with a clean van der Waals interface for two-dimensional sandwich heterostructure electronics," Nano Letters, vol. 24, pp. 3937-3944, March 2024. (DOI: 10.1021/acs.nanolett.4c00117

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[J34] C. T. Chen, Y. Fu, X. Gao, A. Butler, K. Reyes, H. Li, M. Pentaris, A. Yadav, K. T. Wong ✉, H. Yue ✉, and F. Yao âœ‰, "Two-dimensional van der Waals materials and their mixed low-dimensional hybrids for electrochemical energy applications," MRS Bulletin, vol. 48, pp. 1-15, September 2023. (DOI: 10.1557/s43577-023-00597-2

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[J33] S. ShahiA. Ahmed, R. Yang, A. Cabanillas, A. Chakravarty, M. Liu, H. N. Jaiswal, Y. Fu, Y. Guo, S. Jadeja, H. Murugesan, A. Butler, C. T. Chen, J. Muhigirwa, M. Enaitalla, J. Liu, F. Yao, and H. Li âœ‰, "Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors," Journal of Vacuum Science & Technology B, vol. 41, no. 053202, August 2023 (selected as an Editor's Pick). (DOI: 10.1116/6.0002888)

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[J32] H. N. Jaiswal, M. Liu, S. Shahi, A. Cabanillas, S. Wei, Y. Fu, A. Chakravarty, A. Ahmed, J. MuhigirwaF. Yao ✉, and H. Li âœ‰, "Enhanced electrodynamic gating in two-dimensional transistors using ferroelectric capping," Nano Express, vol. 4, no. 035002, July 2023. (DOI: 10.1088/2632-959X/acd5ed)

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[J31] R. Wu, X. Liu âœ‰, Z. Wang, Y. Jing, Y. Yuan, K. Tang, X. Dai, A. Qiu, H. N. Jaiswal, J. Sun, H. Li, and J. Sun âœ‰, "Excitation/inhibition balancing in 2D synaptic transistors with minority-carrier charge dynamics," IEEE Electron Device Letters, vol. 44, no. 1, pp. 156-159, January 2023. (DOI: 10.1109/LED.2022.3224471)

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[J30] S. Wei, Y. Fu, P. Roy, X. Tong, H. Y. Yue, M. Liu, H. N. Jaiswal, S. Shahi, Y. I. Gata, T. Butler, H. Li âœ‰, Q. Jia, and F. Yao ✉, "Two birds with one stone: Prelithiated two-dimensional nanohybrids as high-performance anode materials for lithium-ion batteries," ACS Applied Materials & Interfaces, vol. 14, pp. 35673-35681, August 2022. (DOI: 10.1021/acsami.2c07984

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[J29] S. Wei, Y. Fu, M. Liu, H. Yue, S. Park, Y. H. Lee, H. Li âœ‰, and F. Yao ✉, "Dual-phase MoS2/MXene/CNT ternary nanohybrids for efficient electrocatalytic hydrogen evolution," npj 2D Materials and Applications, vol. 6, no. 25, April 2022. (DOI: 10.1038/s41699-022-00300-0)

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[J28] M. Benner, R. Yang, L. Lin, M. Liu, H. Li, and J. Liu âœ‰, "Mechanism of in-plane and out-of-plane tribovoltaic direct-current transport with metal/oxide/metal dynamic heterojunction," ACS Applied Materials & Interfaces, vol. 14, pp. 2968-2978, January 2022. (DOI: 10.1021/acsami.1c22438

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[J27] S. Wei, S. Baek, H. Yue, M. Liu, S. J. Yun, S. Park, Y. H. Lee, J. Zhao, H. Li âœ‰, K. Reyes ✉, and F. Yao ✉, "Machine-learning assisted exploration: Toward the next-generation catalyst for hydrogen evolution reaction," Journal of The Electrochemical Society, vol. 168, no. 126523, December 2021. (DOI: 10.1149/
1945-7111/ac41f1
)

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[J26] C. Yang ✉, G. Wang, M. Liu, F. Yao, and H. Li âœ‰, "Mechanism, material, design, and implementation principle of two-dimensional material photodetectors," Nanomaterials, vol. 11, no. 2688, October 2021. (DOI: 10.3390/nano11102688)   

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[J25] Y. Sun, S. Xu, T. Zhu, J. Lu, S. Chen, M. Liu, G. Wang, B. Man ✉H. Li âœ‰, and C. Yang âœ‰, "Design and mechanism of photocurrent-modulated graphene field-effect transistor for ultra-sensitive detection of DNA hybridization," Carbon, vol. 182, pp. 167-174, June 2021. (DOI: 10.1016/j.carbon.2021.06.003

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[J24] X. Liu, Y. Pan, J. Yang, D. Qu, H. Li, W. J. Yoo ✉, and J. Sun ✉, "High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions," Applied Physics Letters, vol. 118, no. 233101, June 2021. (DOI: 10.1063/5.0036343)

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[J23] M. Liu, H. N. Jaiswal, S. Shahi, S. Wei, Y. Fu, C. Chang, A. Chakravarty, X. Liu, C. Yang, Y. Liu, Y. H. Lee, V. Perebeinos, F. Yao ✉, and H. Li âœ‰, "Two-dimensional cold electron transport for steep-slope transistors," ACS Nano, vol. 15, pp. 5762-5772, March 2021. (DOI: 10.1021/acsnano.1c01503)

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[J22] K. Lv, Q. Wei, T. Zhu, X. Zhao, Z. Li, Y. Xu, S. Chen, Z. Li, X. Fan, W. Lu, M. Shao, B, Man ✉, H. Li âœ‰, and C. Yang ✉, "Sensitive flexible biosensor based on the three-dimensional layered AgNFs@graphene nanohybrids," Sensors and Actuators B: Chemical, vol. 336, no. 129737, March 2021. (DOI: 10.1016/j.snb.2021.129737

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[J21] Y. Xia, Y. Sun, H. Li, S. Chen, T. Zhu, G. Wang, B. Man, J. Pan ✉, and C. Yang ✉, "Plasma treated graphene FET sensor for the DNA hybridization detection," Talanta, vol. 223, no. 121766, February 2021. (DOI: 10.1016/j.talanta.2020.121766)

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[J20] H. N. Jaiswal, M. Liu, S. Shahi, S. Wei, J. Lee, A. Chakravarty, Y. Guo, R. Wang, J. M. Lee, C. Chang, Y. Fu, R. Dixit, X. Liu, C. Yang, F. Yao ✉, and H. Li âœ‰, "Diode-like selective enhancement of carrier transport through metal-semiconductor interface decorated by monolayer boron nitride," Advanced Materials, vol. 32, no. 2002716, July 2020. (DOI: 10.1002/adma.202002716)

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[J19] M. Liu, S. Wei, S. Shahi, H. N. Jaiswal, P. Paletti, S. Fathipour, M. Remskar, J. Jiao, W. Hwang ✉, F. Yao ✉, and H. Li âœ‰, "Enhanced carrier transport by transition metal doping in WS2 field effect transistors," Nanoscale, vol. 12, pp. 17253-17264, April 2020. (DOI: 10.1039/d0nr01573c)

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[J18] Y. Sun, Z. Peng, H. Li, Z. Wang, Y. Mu, G. Zhang, S. Chen, S. Liu, G. Wang, C. Liu, L. Sun ✉, B. Man ✉, and C. Yang ✉, "Suspended CNT-based FET sensor for ultrasensitive and label-free detection of DNA hybridization," Biosensors and Bioelectronics, vol. 137, pp. 255-262, July 2019. (DOI: 10.1016/j.bios.2019.04.054)

 

[J17] H. N. Jaiswal, M. Liu, S. Shahi, F. Yao, Q. Zhao, X. Xu ✉, and H. Li âœ‰, "Localized surface plasmon resonance on two-dimensional HfSe2 and ZrSe2," Semiconductor Science and Technology, vol. 33, no. 124014, November 2018. (DOI: 10.1088/1361-6641/aae901)

 

[J16] C. Alessandri, S. Fathipour, H. Li, I. Kwak, A. Kummel, M. Remskar, and A. Seabaugh ✉, "Reconfigurable electronic double layer doping in an MoS2 nanoribbon Transistor," IEEE Transactions on Electron Devices, vol. 64, pp. 5217-5222, December 2017. (DOI: 10.1109/TED.2017.2767501

 

[J15] X. Liu, D. Qu, H.-M. Li, I. Moon, F. Ahmed, C. Kim, M. Lee, Y. Choi, J. H. Cho, J. C. Hone, and W. J. Yoo ✉, "Modulation of quantum tunneling via a vertical two-dimensional black phosphorus and molybdenum disulfide p-n junction," ACS Nano, vol. 11, pp. 9143-9150, August 2017. (DOI: 10.1021/acsnano.7b03994)

 

[J14] H.-M. Li, K. Xu, B. Bourdon, H. Lu, Y.-C. Lin, J. A. Robinson, A. C. Seabaugh, and S. K. Fullerton-Shirey ✉, "Electric double layer dynamics in poly(ethylene oxide) LiClO4 on graphene transistors," The Journal of Physical Chemistry C, vol. 121, pp. 16996-17004, July 2017. (DOI: 10.1021/acs.jpcc.7b04788

 

[J13] H.-M. Li, D. Lee, D. Qu, X. Liu, J. Ryu, A. Seabaugh, and W. J. Yoo ✉, "Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide," Nature Communications, vol. 6, no. 6564, March 2015. (DOI: 10.1038/ncomms7564)

 

[J12] C. Yang âœ‰, C. Zhang, G. Zhang, H.-M. Li, R.-J. Ma, S.-C. Xu, S.-Z. Jiang, M. Liu, and B.-Y. Man ✉, "Low-temperature facile synthesis of graphene and graphene-carbon nanotubes hybrid on dielectric surfaces," Materials Research Express, vol. 1, no. 015607, March 2014. (DOI: 10.1088/2053-1591/1/1/015607)

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[J11] H.-M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo ✉, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Scientific Reports, vol. 4, no. 4041, February 2014. (DOI: 10.1038/srep04041)

  

[J10] D.-Y. Lee, H. J. Kim ✉, H.-M. Li, A.-R. Jang, Y.-D. Lim, S. N. Cha, Y. J. Park, D. J. Kang, and W. J. Yoo ✉, "Hybrid energy harvester based on nanopillar solar cells and PVDF nanogenerator," Nanotechnology, vol. 24, no. 175402, April 2013. (DOI: 10.1088/0957-4484/24/17/175402)

 

[J9] H.-M. Li âœ‰, D.-Y. Lee ✉, and W. J. Yoo ✉, "Optoelectronic performance of radial-junction Si nanopillar and nanohole solar cells," IEEE Transactions on Electron Devices, vol. 59, no. 9, pp. 2368-2374, September 2012. (DOI: 10.1109/TED.2012.2205000)

 

[J8] H.-M. Li, G. Zhang, and W. J. Yoo ✉, "Estimation of trapped charge density in SONOS flash memory using a parallel capacitor model," IEEE Transactions on Electron Devices, vol. 58, no. 10, pp. 3254-3259, October 2011. (DOI: 10.1109/TED.2011.2162730)

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[J7] H.-M. Li, G. Zhang, C. Yang, D.-Y. Lee, Y.-D. Lim, T.-Z. Shen, W. J. Yoo ✉, Y. J. Park ✉, H. J. Kim, S. N. Cha, and J. M. Kim, "Enhancement of light absorption using high-k dielectric in localized surface plasmon resonance for silicon-based thin film solar cells," Journal of Applied Physics, vol. 109, no. 093516, May 2011. (DOI: 10.1063/1.3587165)

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[J6] C. Yang, G. Zhang, D.-Y. Lee, H.-M. Li, Y.-D. Lim, W. J. Yoo ✉, Y.-J. Park, and J.-M. Kim, "Self-assembled wire arrays and ITO contacts for silicon nanowire solar cell applications," Chinese Physics Letters, vol. 28, no. 035202, March 2011. (DOI: 10.1088/0256-307X/28/3/035202)

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[J5] G. Zhang, C. H. Ra, H.-M. Li, T.-Z. Shen, B.-K. Cheong, and W. J. Yoo ✉, "Modified potential well formed by Si/SiO2/TiN/TiO2/SiO2/TaN for flash memory application," IEEE Transactions on Electron Devices, vol. 57, no. 11, pp. 2794-2800, November 2010. (DOI: 10.1109/TED.2010.2066200)

 

[J4] C. Yang, G. Zhang, H.-M. Li, and W. J. Yoo ✉, "Localized surface plasmon resonances caused by Ag nanoparticles on SiN for solar cell applications," Journal of the Korean Physical Society, vol. 56, no. 5, pp.1488-1491, May 2010. (DOI: 10.3938/jkps.56.1488)

 

[J3] H.-M. Li, G. Zhang, and W. J. Yoo ✉, "Deep level transient spectroscopy on charge traps in high-k ZrO2," Thin Solid Films, vol. 518, pp. 6382-6384, April 2010. (DOI: 10.1016/j.tsf.2010.03.137)

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[J2] G. Zhang, S.-H. Lee, C. H. Ra, H.-M. Li, and W. J. Yoo ✉, "Second-bit-effect-free multibit-cell flash memory using Si3N4/ZrO2 split charge trapping layer," IEEE Transactions on Electron Devices, vol. 56, no. 9, pp. 1966-1973, September 2009. (DOI: 10.1109/TED.2009.2026090)

 

[J1] H.-M. Li, C.-H. Ra, G. Zhang, W. J. Yoo ✉, K.-W. Lee, and J.-D. Kim, "Frequency and temperature dependence of the dielectric properties of a PCB substrate for advanced packaging applications," Journal of the Korean Physical Society, vol. 54, no. 3, pp. 1096-1099, March 2009. (DOI: 10.3938/jkps.54.1096)

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Journals

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     Conference Proceedings     

 

[C14] A. Cabanillas, H. N. Jaiswal, A. Chakravarty, A. Ahmed, Y. Fu, C. T. Chen, F. Yao, and H. Li âœ‰, "Inherent photogating in MoTe2 transistors with van der Waals contacts," in the 82nd Device Research Conference (DRC 2024), College Park, MD, USA, June 23-26, 2024. (DOI: 10.1109/DRC61706.2024.10605297)

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[C13] S. Shahi, M. Liu, H. N. Jaiswal, A. Chakravarty, S. Wei, Y. Fu, A. Ahmed, A. Cabanillas, Y. Guo, F. Yao âœ‰, and H. Li âœ‰, "Metal-semiconductor Schottky diodes with record-high rectification and conductance using two-dimensional monolayer decoration," in the 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2022), Oita, Japan, March 6-9, 2022. (DOI: 10.1109/EDTM53872.2022.9798125)

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[C12] M. Liu, H. N. Jaiswal, S. Shahi, S. Wei, Y. Fu, C. Chang, A. Chakravarty, F. Yao ✉, and H. Li âœ‰, "Monolayer MoS2 steep-slope transistors with record-high sub-60-mV/decade current density using Dirac-source electron injection," in 2020 IEEE International Electron Devices Meeting (IEDM), pp. 251-254, virtual, December 12-16, 2020. (DOI: 10.1109/IEDM13553.2020.9371961)

 

[C11] S. Shahi, M. Liu, H. N. Jaiswal, L. Xiao, S. Wei, H. Kim, S. J. Yun, Y. H. Lee, F. Yao, and H. Li âœ‰, "Field effect and Raman characterization of self-assembled MoS2 nanoscrolls," in the 77th Device Research Conference (DRC 2019), Ann Arbor, MI, USA, June 23-26, 2019. (DOI: 10.1109/DRC46940.2019.9046427)

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[C10] M. Liu, S. Shahi, S. Fathipour, W. Hwang, M. Remskar, A. Seabaugh ✉, and H. Li âœ‰, "Improvement of metal-semiconductor contact from Schottky to Ohmic by Cu doping in transition metal dichalcogenide transistors," in the 13th Nanotechnology Materials and Devices Conference (NMDC 2018), Portland, OR, USA, October 14-17, 2018. (DOI: 10.1109/NMDC.2018.8605891)

 

[C9] S. Fathipour ✉, H.-M. Li, P. Paletti, M. Remskar, S. Fullerton-Shirey, and A. Seabaugh ✉, "First synthesized WS2 nanotube and nanoribbon field effect transistors grown by chemical vapor transport," in the 75th Device Research Conference (DRC 2017), South Bend, IN, USA, June 25-28, 2017. (DOI: 10.1109/DRC.2017.7999406)

 

[C8] A. Seabaugh ✉, C. Alessandri, M. A. Heidarlou, H.-M. Li, L. Liu, H. Lu, S. Fathipour, P. Paletti, P. Pandey, and T. Ytterdal ✉, "Steep slope transistors: Tunnel FETs and beyond," in the 46th European Solid-State Device Research Conference (ESSDERC 2016), Lausanne, Switzerland, September 12-15, 2016. (DOI: 10.1109/ESSDERC.2016.7599658)

 

[C7] S. Fathipour ✉, H.-M. Li, M. Remskar, L. Yeh, W. Tsai, Y. Lin, S. Fullerton-Shirey, and A. Seabaugh ✉, "Record high current density and low contact resistance in MoS2 FETs by ion doping," in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Taiwan, April 25-27, 2016. (DOI: 10.1109/VLSI-TSA.2016.7480511)

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[C6] H.-M. Li, D.-Y. Lee, M.-S. Choi, D.-S. Qu, X.-C. Liu, C.-H. Ra, and W. J. Yoo ✉, "Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor," in 2013 IEEE International Electron Devices Meeting (IEDM), pp. 507-510, Washington, DC, USA, December 9-11, 2013. (DOI: 10.1109/IEDM.2013.6724662)

[C5] H.-M. Li, T.-Z. Shen, D.-Y. Lee, and W. J. Yoo ✉, "High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance," in 2012 IEEE International Electron Devices Meeting (IEDM), pp. 549-552, SAN Francisco, CA, USA, December 10-12, 2012. (DOI: 10.1109/IEDM.2012.6479096)

[C4] H.-M. Li, D.-Y. Lee, Y.-D. Lim, C. Yang, G. Zhang, H. J. Kim, S. N. Cha, J. M. Kim, and W. J. Yoo ✉, "High efficiency radial-junction Si nanohole solar cells formed by self-assembling high aspect ratio plasma etching," in 2011 IEEE International Electron Devices Meeting (IEDM), pp. 856-859, Washington, DC, USA, December 5-7, 2011. (DOI: 10.1109/IEDM.2011.6131684)

[C3] G. Zhang, T.-Z. Shen, H.-M. Li, D.-Y. Lee, C.-H. Ra, and W. J. Yoo ✉, "Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access," in 2011 IEEE International Electron Devices Meeting (IEDM), pp. 31-34, Washington, DC, USA, December 5-7, 2011. (DOI: 10.1109/IEDM.2011.6131476)

[C2]
G. Zhang, C. Yang, H.-M. Li, T. Shen, and W. J. Yoo ✉, "Direct observation of channel hot-electron energy in short-channel metal-oxide-semiconductor field-effect transistors," in the 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai, China, November 1-4, 2010. (DOI: 10.1109/ICSICT.2010.5667466)

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[C1] G. Zhang, C. H. Ra, H.-M. Li, C. Yang, and W. J. Yoo ✉, "Potential well engineering by partial oxidation of TiN for high-speed and low-voltage flash memory with good 125ºC data retention and excellent endurance," in 2009 IEEE International Electron Devices Meeting (IEDM), pp. 835-838, Baltimore, MD, USA, December 7-9, 2009. (DOI: 10.1109/IEDM.2009.5424212)

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Conference Proceedings

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     Invited / Keynote / Tutorial Talks     

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[I23] H. Li âœ‰, "Two-dimensional MoS2: synthesis, engineering, and applications," in International Conference on Functional Nanomaterials and Their Applications in Sustainability, Environment, Energy, and Biotechnology (ICFNA 2024), Goa, India, November 16-18, 2024. 

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[I22] H. Li âœ‰, "Interfacial design and energy applications of 2D materials," in the 16th International Conference on Frontiers of Polymers and Advanced Materials (ICFPAM 2024), Berhampur, India, November 9-13, 2024. 

 

[I21] H. Li âœ‰, "Exploration of 2D materials for energy-efficient nanoelectronics," in the 1st Workshop on Emerging Trends in Semiconductor Technology, Center for Advanced Semiconductor Technologies, Buffalo, NY, USA, August 22-23, 2024. 

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[I20] H. Li âœ‰, "Interfacial design of 2D materials for energy-efficient nanoelectronics," in the AVS 69th International Symposium & Exhibition, Portland, OR, USA, November 5-10, 2023.

 

[I19] H. Li âœ‰, "Two-dimensional materials and heterostructures for nanoelectronics and optoelectronics," in 2023 IIT Bombay-University at Buffalo Workshop in Photonics, Nanomaterials, and Biotechnology, virtual, July 25-26, 2023.

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[I18] H. Li âœ‰, "Explore two-dimensional energy-efficient nanoelectronics," in 2023 the Global Meet on 2D Materials and Graphene (GM2DMAT 2023), Toronto, Canada, May 22-24, 2023.

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[I17] H. Li âœ‰, "Recent advances of energy-efficient two-dimensional nanoelectronics," in 2022 International Conference on Electronics, Mechanical Engineering and Computer Science (EMECS 2022), Xiamen, China, October 21-23, 2022.

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[I16] H. Li âœ‰, "Novel Dirac-source cold carrier injection for energy-efficient 2D nanoelectronics," in 2022 Materials Science & Technology (MS&T22) Technical Meeting and Exhibition, Pittsburgh, PA, USA, October 9-13, 2022.

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[I15] H. Li âœ‰, "Cold electron transport in two-dimensional van der Waals nanostructures," in Future Materials 2022, the 3rd Edition of International Conference on Materials Science & Nanotechnology, Rome, Italy, October 3-5, 2022.

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[I14] H. Li âœ‰, "Cold-source steep-slope transistors," in 2022 University at Buffalo (UB)-IEEE Nano-Symposium, Buffalo, NY, USA, September 21-23, 2022.

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[I13] H. Li âœ‰, "Novel charge transport in two-dimensional van der Waals nanoelectronics," in Syracuse University, NY, USA, September 9, 2022.

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[I12] H. Li âœ‰, "Novel charge transport at 2D metal-semiconductor interfaces," in 2022 the 2nd Global Summit and Expo on Graphene and 2D Materials (2DMAT2022), Edinburgh, Scotland, August 22-24, 2022.

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[I11] H. Li âœ‰, "Out-of-plane charge transport in two-dimensional van der Waals nanostructures," in the 5th Global Research Laboratory (GRL) Workshop, Columbia University, NY, USA, June 24-25, 2022.

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[I10] H. Li âœ‰, "Out-of-plane carrier transport in two-dimensional van der Waals nanostructures," in Global Experts Meet on Condensed Matter Physics 2022 (GEMCMP22), Rome, Italy, June 16-18, 2022. 

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[I9] H. Li âœ‰, "Out-of-plane carrier transport in two-dimensional van der Waals nanostructures," in International Meet on Condensed Matter Physics (CMPMEET 2022), Munich, Germany, May 23-25, 2022. 

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[I8] H. Li âœ‰, "Novel carrier transport through metal contact of 2D semiconductors decorated by monolayer boron nitride," in the 3rd International Conference on Materials Science and Engineering (Materials 2022), Boston, MA, USA, April 18-20, 2022. 

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[I7] H. Li âœ‰, "The rise of 2D nanoelectronics," in the 3rd International Online Conference on Graphene & 2D Materials (Graphene 2022), virtual, April 13-14, 2022. 

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[I6] H. Li âœ‰, "Two-dimensional materials - A "flat" platform for future nanoelectronics," in the 4th Virtual Congress on Materials Science and Engineering (Materials Info 2022), virtual, March 28-31, 2022. 

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[I5] H. Li âœ‰, "Two-dimensional materials for future energy-efficient nanoelectronics," in the 5th Edition of Applied Science, Engineering and Technology Virtual (V-ASET 2021), virtual, December 13-14, 2021. 

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[I4] H. Li âœ‰, "Two-dimensional cold-electron steep-slope transistors," in Graphene Summit 2021 - The 2nd Global Virtual Summit on Carbon, Graphene, 0D, 1D, and 2D Materials, virtual, November 15-16, 2021.

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[I3] H. Li âœ‰, "Boron nitride decoration for metal contacts of 2D semiconductors," in 2021 the 4th Edition of Webinar on Nanotechnology, virtual, November 8-9, 2021. 

 

[I2] H. Li âœ‰, "Two-dimensional Dirac-source steep-slope transistors with record-high sub-60-mV/decade current density," in 2021 Global Summit and Expo on Graphene and 2D Materials (2DMAT2021), virtual, August 23-25, 2021. 

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[I1] H. Li âœ‰, "Two-dimensional materials: A new platform for electronics and optoelectronics," in Notre Dame/IEEE Symposium on Electronics and Photonics, University of Notre Dame, IN, USA, October 17, 2016. 

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Invited Talks

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     Abstracts and Other Conference Presentations     

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[A42] F. Yao ✉ and H. Li ✉, "2D materials for energy-efficient nanoelectronics," in the AVS 70th International Symposium & Exhibition, Tampa, FL, USA, November 3-8, 2024.  

 

[A41] C. T. Chen, A. CabanillasA. Ahmed, A. Bulter, Y. Fu, H. Hui, A. Chakravarty, H. Zeng, A. Yadav, H. Li ✉, K. Wong ✉, and F. Yao ✉, "Location-selective CVD synthesis of circular MoS2 flakes with ultrahigh field-effect mobility," in the AVS 70th International Symposium & Exhibition, Tampa, FL, USA, November 3-8, 2024.  

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[A40] H. Li ✉, "Interfacial design of two-dimensional nanoelectronics," in 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), Salt Lake City, UT, USA, October 21-24, 2024.

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[A39] S. Shahi, A. Cabanillas, A. Chakravarty, A. Ahmed, Y. Fu, C. T. Chen, F. Yao, and H. Li ✉, "Tunable charge transport at 2D/3D integrated interfaces," in the Workshop on Innovative Nanoscale Devices and Systems (WINDS) 2023, Kailua-Kona, HI, USA, December 3-8, 2023.

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[A38] C. T. Chen, A. Bulter, Y. Fu, A. CabanillasA. Ahmed, A. Chakravarty, S. S. Jadeja, H. Hui, L. Samson, H. Zeng, A. Yadav, H. Li ✉, K. Wong ✉, and F. Yao ✉, "Site-specific synthesis of molybdenum disulfide using chemical vapor deposition," in the AVS 69th International Symposium & Exhibition, Portland, OR, USA, November 5-10, 2023.  

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[A37] A. Ahmed, A. Cabanillas, A. Chakravarty, F. Yao, and H. Li âœ‰, "Plasma-induced energy band evolution for two-dimensional heterogeneous junctions" in the AVS 69th International Symposium & Exhibition, Portland, OR, USA, November 5-10, 2023.  

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[A36] A. Ahmed, H. N. Jaiswal, J. Muhigirwa, F. Yao, and H. Li âœ‰, "Low-energy laminated metal contacts for two-dimensional nanoelectronics," in the 127th Topical Symposium of the New York State Section of the American Physical Society (NYSSAPS), Buffalo, NY, USA, April 29, 2023.  

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[A35] C. T. Chen, A. Tiroucoumarane, D. V. S. P. Kosana, R. Finster, Y. Fu, A. Butler, A. Chakravarty, H. Li, S. Broderick, K. Rajan, and F. Yao ✉, "Data-driven smart synthesis of two-dimensional materials," in the 127th Topical Symposium of the New York State Section of the American Physical Society (NYSSAPS), Buffalo, NY, USA, April 29, 2023.

 

[A34] S. S. Jadeja and H. Li ✉, "Field-effect Raman spectroscopic investigation on two-dimensional MoS2," in the SUNY Graduate Research Conference 2023, virtual, April 11, 2023. 

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[A33] A. Cabanillas and H. Li ✉, "Data-driven dual-barrier models for Schottky barrier extraction," in the SUNY Graduate Research Conference 2023, virtual, April 11, 2023. 

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[A32] A. Chakravarty and H. Li ✉, "Anisotropic charge transport in MoS2 monolayers," in the SUNY Graduate Research Conference 2023, virtual, April 11, 2023. 

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[A31] S. Wei, Y. Fu, H. Li, and F. Yao ✉, "Dual-phase MoS2/MXene/CNT ternary nanohybrides for efficient electrocatalytic hydrogen evolution," in Gordon Research Conference (GRC) Nanomaterials for Applications in Energy Technology, Ventura, CA, USA, February 26-March 3, 2023. 

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[A30] M. Liu, H. N. Jaiswal, S. Shahi, S. Wei, F. Yu, A. Chakravarty, A. Cabanillas, A. AhmedF. Yao ✉, and H. Li ✉, "Two-dimensional steep-slope transistors using graphene cold sources," in American Vacuum Society (AVS) 68th International Symposium & Exhibition, Pittsburgh, PA, USA, November 6-11, 2022. 

 

[A29] A. Chakravarty, Y. Fu, M. Liu, H. N. Jaiswal, S. Shahi, F. Yao ✉, and H. Li ✉, "MoS2 on sapphire for aligned growth using liquid precursors," in American Vacuum Society​ (AVS) 68th International Symposium & Exhibition, Pittsburgh, PA, USA, November 6-11, 2022. 

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[A28] F. Yao ✉, S. Wei, Y. Fu, M. Liu, Y. I. Gata, Q. Liu, and H. Li âœ‰, "Dual-phase MoS2/MXene/CNT ternary nanohybrids for efficient electrocatalytic hydrogen evolution," in the 242nd Electrochemical Society (ECS) Meeting, Atlanta, GA, USA, October 9-13, 2022.

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[A27] Y. Fu, S. Wei, Y. Chen, H. Li ✉, Y. C. Li, and F. Yao ✉, "Novel hollow spherical carbon nitride synthesis and its application in zinc-air batteries," in the 242nd Electrochemical Society (ECS) Meeting, Atlanta, GA, USA, October 9-13, 2022.

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[A26] A. Chakravarty, Y. Fu, M. Liu, H. N. Jaiswal, S. Shahi, F. Yao ✉, and H. Li ✉, "MoS2 on sapphire for aligned growth using liquid precursors," in the Gordon Research Seminar (GRS) on Two Dimensional Electronics Beyond Graphene, Southern New Hampshire University, Manchester, NH, USA, June 11-12, 2022.

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[A25] S. Wei, Y. Fu, M. LiuH. Li âœ‰, and F. Yao ✉, "Dual-phase MoS2/MXene/CNT ternary nanohybrids for efficient electrocatalytic hydrogen evolution," in the SUNY Graduate Research Conference 2022, virtual, February 25, 2022.

 

[A24] M. Liu, H. N. Jaiswal, S. Shahi, A. Chakravarty, S. Wei, F. Yao ✉, and H. Li âœ‰, "Two-dimensional steep-slope transistors using Dirac-source electron injection," in the SUNY Graduate Research Conference 2022, virtual, February 25, 2022.

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[A23] A. Chakravarty, Y. Fu, F. Yao ✉, and H. Li âœ‰, "MoS2 on sapphire for aligned growth using liquid precursor," in the SUNY Graduate Research Conference 2022, virtual, February 25, 2022.

 

[A22] H. Li and F. Yao ✉, "Two-dimensional layered materials for electrochemical energy storage and conversion," in the 239th Electrochemical Society (ECS) Meeting with the 18th International Meeting on Chemical Sensors (IMCS), virtual, May 30-June 3, 2021.

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[A21] H. N. Jaiswal, M. Liu, S. Shahi, S. Wei, F. Yao ✉, and H. Li âœ‰, "Enhanced carrier transport of MoS2 through metal-semiconductor interface decorated by monolayer h-BN," in the 2019 Materials Research Society (MRS) Fall Meeting, Boston, MA, USA, December 1-6, 2019.


[A20] M. Liu, S. Shahi, H. N. Jaiswal, S. Wei, F. Yao ✉, and H. Li âœ‰, "Transition metal enhanced carrier transport in two-dimensional semiconducting crystals," in the 2019 Materials Research Society (MRS) Fall Meeting, Boston, MA, USA, December 1-6, 2019.


[A19] S. Wei, S. Baek, C. Chang, K. Reyes, H. Li, and F. Yao ✉, "Machine-learning enabled search for the next-generation catalyst for hydrogen evolution reaction," in the 236th Electrochemical Society (ECS) Meeting, Atlanta, GA, USA, October 13-17, 2019. 

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[A18] W. Jiao, S. Wei, C. Chang, H. Li, and F. Yao ✉, "Ultra-fast switching speed electrochromic supercapacitor," in the New York Battery and Energy Storage Technology (NY-BEST) Annual Fall Energy Storage Technology and Innovation Conference, Rochester, NY, USA, October 2, 2019.


[A17] S. Wei, S. Baek, C. Chang, K. Reyes, H. Li, and F. Yao ✉, "Toward the most efficient catalyst for hydrogen evolution reaction," in the New York Battery and Energy Storage Technology (NY-BEST) Annual Fall Energy Storage Technology and Innovation Conference, Rochester, NY, USA, October 2, 2019.
 

[A16] H. N. Jaiswal, M. Liu, S. Shahi, F. Yao, Q. Zhao, X. Xu, and H. Li âœ‰, "Layer-number-dependent light-matter interaction on 2D monolayer and multilayer HfSe2," in the 13th Nanotechnology Materials and Devices Conference (NMDC 2018), Portland, OR, USA, October 14-17, 2018.

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[A15] H.-M. Li, B. Bourdon, Y.-C. Lin, J. Robinson, A. Seabaugh ✉, and S. Fullerton ✉, "Dynamics of ion-gating 2D crystals using a solid polymer electrolyte," in the American Physical Society (APS) March Meeting 2015, San Antonio, TX, USA, March 2-6, 2015.


[A14] H.-M. Li, B. Bourdon, Y.-C. Lin, J. Robinson, A. Seabaugh ✉, and S. Fullerton ✉, "Temperature dependence of ion transport in solid polymer electrolytes for electrostatic doping of 2D crystals," in the 2nd Muju International Winter School Series (MIWS2 2015), Muju, Korea, January 25-31, 2015. 


[A13] M. S. Choi, H.-M. Li, D.-Y. Lee, S. H. Lee, D. Qu, and W. J. Yoo ✉, "Nano-scaling effect and intrinsic electrical properties of two-dimensional materials," in the 1st International Conference on Surface Engineering (ICSE 2013), Busan, Korea, November 18-21, 2013.


[A12] H.-M. Li, D.-Y. Lee, M.-S. Choi, and W. J. Yoo ✉, "Gate-controlled Schottky barrier modulation for carrier transport in WSe2 field effect transistor," in the 1st International Conference on Surface Engineering (ICSE 2013), Busan, Korea, November 18-21, 2013.


[A11] H.-M. Li, E. Hwang, and W. J. Yoo ✉, "Electron diffusion in electrodynamic response of graphene," in ImagineNano 2013, Bilbao, Spain, April 23-26, 2013.


[A10] H.-M. Li and W. J. Yoo ✉, "Photocurrent enhancement in graphene stack photodetector," in the 4th International Conference on Recent Progress in Graphene Research (RPGR 2012), Beijing, China, October 3-6, 2012.


[A9] H.-M. Li, T.-Z. Shen, D.-Y. Lee, M.-S. Choi, C.-H. Ra, and W. J. Yoo ✉, "Enhancement of photocurrent generation in layer-by-layer graphene stack photodetector," in the 2nd International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2012), Jeju, Korea, September 16-19, 2012.
 

[A8] D.-Y. Lee, C.-H. Ra, T.-Z. Shen, S.-H. Lee, M.-S. Choi, H.-M. Li, Y.-D. Lim, and W. J. Yoo ✉, "Control of charge trapping in graphene field-effect transistor," in the 3rd International Conference on Recent Progress in Graphene Research (RPGR 2011), Suwon, Korea, October 3-6, 2011.


[A7] H.-M. Li and W. J. Yoo ✉, "High photoresponsivity graphene stack photodetector," in the 3rd International Conference on Recent Progress in Graphene Research (RPGR 2011), Suwon, Korea, October 3-6, 2011.


[A6] T.-Z. Shen, C.-H. Ra, H.-M. Li, D.-Y. Lee, and W. J. Yoo ✉, "High-efficiency graphene photodetector using transparent electrode," in the 3rd International Conference on Microelectronics and Plasma Technology (ICMAP 2011), Dalian, China, July 4-7, 2011.


[A5] H.-M. Li and W. J. Yoo ✉, "Enhancement of light absorption using high-k dielectric in localized surface plasmon resonance for silicon-based thin film solar cells," in the 3rd International Conference on Microelectronics and Plasma Technology (ICMAP 2011), Dalian, China, July 4-7, 2011.


[A4] D.-Y. Lee, C. Yang, H.-M. Li, W. J. Yoo ✉, Y. J. Park, and J. M. Kim, "Plasma etching technology to enhance solar cell efficiency," in the 32nd International Symposium on Dry Process (DPS 2010), Tokyo, Japan, November 11-12, 2010. 

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[A3] H.-M. Li, G. Zhang, and W. J. Yoo ✉, "Deep level transient spectroscopy on charge traps in high-k ZrO2," in the 2nd International Conference on Microelectronics and Plasma Technology (ICMAP 2009), Busan, Korea, September 22-25, 2009.


[A2] C.-H. Ra, H.-M. Li, W. J. Yoo ✉, C. H. Lim, K.-W. Lee, and J.-D. Kim, "Investigation of plasma etching properties of polymeric materials used for packaging application," in the 17th World Interfinish Congress & Exposition (Interfinish 2008), Busan, Korea, June 16-18, 2008.


[A1] H.-M. Li, C.-H. Ra, W. J. Yoo ✉, C. H. Lim, K.-W. Lee, and J.-D. Kim, "Frequency and temperature dependence of dielectric properties of PCBs substrate," in the 17th World Interfinish Congress & Exposition (Interfinish 2008), Busan, Korea, June 16-18, 2008.

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Other Presentations

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     Patents     

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[P9] F. Yao and H. Li, "Post-graphene nanohybrid composites, methods of making same, and uses thereof," under review process.

 

[P8] F. Yao and H. Li, "A facile metal-assisted denitrification (MAD) process for hollow Zn cocoon encapsulated CxNy microsphere synthesis," under review process.

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[P7] V. Perebeinos, J. Bird, and H. Li, “Quantum sensing using entangled photons and phonons,” under review process. 

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[P6] H. Li and F. Yao, "Field effect transistors including quantum layers," US (United States) Patent 12002877 B2, 2024.

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[P5] Y.-J. Park, J.-M. Kim, H.-M. Li, and W. J. Yoo, "Solar cell having absorption wavelength shift means of incident light," KR (Republic of Korea) Patent 20110134749, 2011. 

[P4] Y.-J. Park, J.-M. Kim, H.-M. Li, and W. J. Yoo, "Anti-reflection element using surface plasmon and high-k dielectric and method of manufacturing the same," US (United States) Patent 20110235184, KR (Republic of Korea) Patent 20110107603, 2011. 

[P3] S.-M. Kim, S.-N. Cha, H.-M. Li, and W. J. Yoo, "Photoelectric device and method of manufacturing the same," KR (Republic of Korea) Patent 10-2011-0061802, 2011. 

[P2] S.-M. Kim, S.-N. Cha, W. J. Yoo, D.-Y. Lee, and H.-M. Li, "Surface plasmon generating device, method of fabricating the same, and optical device employing the surface plasmon generating device," KR (Republic of Korea) Patent 10-2011-0072566, 2011. 

 

[P1] C.-J. Ryu, T.-Z. Shen, W. J. Yoo, H.-M. Li, M.-S. Choi, and J.-Y. Choi, "Two-dimensional materials stacked flexible photosensor," US (United States) Patent 20140231886, 2014.

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Patents
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