Research Highlights (selected)
Comparison of 2D planar FET and vertical FET based on a MoS2/Gr heterostructure (in preparation).
Microscopy and SEM images of suspended structure using monolayer and multilayer MoS2 (in preparation).
A 2D heterobilayer structure for high-efficiency and high-density solar cell applications (in preparation).
Anisotropic LSPR response has been investigated in 2D HfSe2 and ZrSe2 in two extreme conditions: in-plane direction vs out-of-plane direction and monolayer vs multilayer (Semicond. Sci. Technol., 2018).
Quantum tunneling with the signature of NDR was demonstrated in a 2D heterojunction composited of black phosphorus and MoS2 (ACS Nano, 2017).
An MoS2 nanotube/nanoribbon FET with reconfigurable electric double layer gating (IEEE Trans. Electron Devices, 2017).
A homogeneous MoS2 vertical p-n junction made by chemical doping. The thickness is scaled down 3 nm which is the world's thinnest so far (Nat. Commun., 2015).
A back-gated MoS2 transistor used as a photodetector. A gate-controlled metal-semiconductor barrier modulation determines the efficiency of charge carrier collection (Sci. Rep., 2014).
A graphene photodetector with enhanced photoresponse due to trap assistance (IEEE IEDM, 2012).
Molecular structures of intrinsic WS2 and Cu intercalated WS2 (in preparation).
An epitaxially grown graphene on SiC gated by electric double layer (EDL) using solid polymer electrolyte (PEO:LiClO4) (J. Phys. Chem. C, 2017).
A CVD-synthesized MoS2 transistor with h-BN decorated metal-semiconductor contact (in preparation).
Research Posters (selected)
Research Videos
Research Focuses
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Novel physics and engineering of 2D materials including graphene (Gr), hexagonal boron nitride (h-BN), transition metal dichalcogenides (TMDs), monochalcogenides (MXs), carbon nitride (CN), and their van der Waals hetero-structures and hybrid systems.
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Application of high-performance energy-efficient 2D nanoelectronic devices including field-effect transistors, tunnel transistors, cold-source transistors, memories, photosensors, and solar cells, etc.
Research Activities
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Material growth, engineering, and device fabrication by micro- and nano-electro-mechanical systems (MEMS/NEMS).
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Material and device characterization by various electrical, spectroscopy and microscopy techniques.
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Theory and modeling of material properties and device performance.
Sponsors
We thank the following funding agencies and industrial partners for supporting our research since 2017.
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UB Office of the Vice President for Research and Economic Development (OVPRED)
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National Science Foundation (NSF)
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Empire State Development's Division of Science, Technology and Innovation (NYSTAR)
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New York State Energy Research and Development Authority (NYSERDA)
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FuzeHub - Jeff Lawrence Innovation Fund
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SUNY Applied Materials Research Institute (SAMRI)
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Air Force Office of Scientific Research (AFOSR)
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Custom Electronics, Inc.
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Applied Materials
